Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

2001 ◽  
Vol 188 (2) ◽  
pp. 705-709 ◽  
Author(s):  
T. Kitamura ◽  
Y. Suzuki ◽  
Y. Ishida ◽  
X.Q. Shen ◽  
H. Nakanishi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Radio Frequency Plasma ◽  
Multiple Quantum ◽  
Frequency Plasma

Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grown by Molecular Beam Epitaxy

2002 ◽  
Vol 19 (8) ◽  
pp. 1152-1154 ◽  
Author(s):  
LÜ You-Ming ◽  
Shen De-Zhen ◽  
Liu Yi-Chun ◽  
Li Bing-Hui ◽  
Liang Hong-Wei ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Impact of In content on the structural and optical properties of (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Patrick Waltereit ◽  
James S. Speck
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Biaxial Tension ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties ◽  
Piezoelectric Polarization

AbstractWe have studied the structural and optical properties of a series of (In,Ga)/GaN multiple quantum wells with identical thicknesses but varied In content grown by plasma-assisted molecular beam epitaxy. Careful choice of the growth parameters returns samples with smooth and abrupt interfaces. The shift of the photoluminescence transition energy with externally applied biaxial tension was investigated. We observed a red-shift for small In contents while a blue-shift was detected for higher In contents. This result is in qualitative agreement with band profile calculations taking into account both the band gap deformation potentials and the piezoelectric polarization in these structures. However, the magnitude of the shift is well in excess of the calculated one. We attribute this finding to a substantial deviation of the piezoelectric constants from those calculated for unstrained material. Finally, we estimate the piezoelectric polarization of InGaN/GaN for linear and non-linear terms in strain.

Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 2 (5) ◽  
pp. 271-276
Author(s):  
Gordie Brummer ◽  
Denis Nothern ◽  
T.D. Moustakas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Molecular Beam ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Light Emitting

ABSTRACTAlGaN based multiple quantum wells (MQWs) were grown on 8° vicinal 4H p-SiC substrates by plasma-assisted molecular beam epitaxy. The MQWs were designed to emit near 300 nm using the wurtzite k.p model. The MQW periodicity and strain state were measured with X-ray diffraction. The optical properties were characterized with temperature dependent photoluminescence (PL). The internal quantum efficiency was estimated from the ratio of room temperature to 18K integrated PL intensity. Internal quantum efficiency up to 48% was achieved. These data are encouraging for future vertical and inverted ultraviolet light emitting diodes grown on p-SiC substrates.

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